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Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in δ-doped GaAs:Si

✍ Scribed by D. Richards; J. Wagner; M. Ramsteiner; U. Ekenberg; G. Fasol; K. Ploog


Book ID
118365470
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
519 KB
Volume
267
Category
Article
ISSN
0039-6028

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