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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

✍ Scribed by Hammersley, S.; Watson-Parris, D.; Dawson, P.; Godfrey, M. J.; Badcock, T. J.; Kappers, M. J.; McAleese, C.; Oliver, R. A.; Humphreys, C. J.

Book ID: 121307728
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 485 KB
Volume: 111
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3703062

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