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Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

✍ Scribed by N. I. Bochkareva; Y. T. Rebane; Y. G. Shreter

Book ID: 126268937
Publisher: Springer
Year: 2014
Tongue: English
Weight: 338 KB
Volume: 48
Category: Article
ISSN: 1063-7826
DOI: 10.1134/S1063782614080065

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