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Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

✍ Scribed by Prudaev, I. A.; Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Tolbanov, O. P.

No coin nor oath required. For personal study only.

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