𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

✍ Scribed by Wu, L.W.; Chang, S.J.; Wen, T.C.; Su, Y.K.; Chen, J.F.; Lai, W.C.; Kuo, C.H.; Chen, C.H.; Sheu, J.K.


Book ID
117870095
Publisher
IEEE
Year
2002
Tongue
English
Weight
225 KB
Volume
38
Category
Article
ISSN
0018-9197

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Fabrication of blue and green non-polar
✍ Liu, Bin ;Han, Ping ;Xie, Zili ;Zhang, Rong ;Liu, Chengxiang ;Xiu, Xiangqian ;Hu πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 261 KB

## Abstract The non‐polar m‐plane InGaN/GaN light‐emitting diodes (LEDs) grown by metal‐organic chemical vapor deposition (MOCVD) on LiAlO~2~(100) substrates were investigated. The structure of LEDs is composed by GaN p–n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or