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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

✍ Scribed by Malinauskas, T.; Kadys, A.; Grinys, T.; Nargelas, S.; Aleksiejnas, R.; Miasojedovas, S.; Mickeviius, J.; Tomašinas, R.; Jarašinas, K.; Vengris, M.; Okur, S.; Avrutin, V.; Li, X.; Zhang, F.; Ozgür, U.; Morkoc, H.

Book ID: 120019444
Publisher: SPIE
Year: 2012
Weight: 712 KB
Category: Article
DOI: 10.1117/12.906488

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