Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

✍ Scribed by Liu, Guangyu; Zhang, Jing; Zhao, Hongping; Tansu, Nelson

• Book ID: 120472457
• Publisher: SPIE
• Year: 2012
• Weight: 394 KB
• Category: Article
• DOI: 10.1117/12.909633