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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes

✍ Scribed by Liu, H. Y.; Li, X.; Zhang, F.; Avrutin, V.; Izyumskaya, N.; Ozgür, U.; Yankovich, A. B.; Kvit, A. V.; Voyles, P. M.; Morkoc, H.

Book ID: 120472456
Publisher: SPIE
Year: 2012
Weight: 372 KB
Category: Article
DOI: 10.1117/12.903930

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