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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells

✍ Scribed by Klymenko, Mykhaylo V.; Sukhoivanov, Igor A.; Shulika, Oleksiy V.

No coin nor oath required. For personal study only.

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