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The composition dependence of the InxGa1−xN bandgap

✍ Scribed by K.P O’Donnell; I Fernandez-Torrente; P.R Edwards; R.W Martin

Book ID
108165846
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
232 KB
Volume
269
Category
Article
ISSN
0022-0248

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Compositional and morphological analysis
Compositional and morphological analysis of InxGa1−xN/GaN epilayers
✍ Li, K.; Wee, A. T. S.; Lin, J.; Feng, Z. C.; Lau, E. W. P. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB 👁 1 views

The compositional and surface morphological properties of In x Ga 1-x N epilayers with different indium content grown on GaN sublayers have been studied by x-ray diffraction (XRD), RBS, XPS and atomic force microscopy (AFM). The In x Ga 1-x N epilayers were grown on GaN by metal-organic chemical vap