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Thermodynamic analysis of the MOVPE growth of InxGa1−xN

✍ Scribed by Akinori Koukitu; Naoyuki Takahashi; Tetsuya Taki; Hisashi Seki


Book ID
108342245
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
381 KB
Volume
170
Category
Article
ISSN
0022-0248

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The growth of In x Ga 1 À x N layers on c-plane GaN (2 mm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N 2 as the carrier gas. X-ray CTR scatterings on In x Ga 1 À x N layer were measured at growth temperatures and a