X-ray characterization at growth tempera
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Guangxu Ju; Koji Ninoi; Hajime Kamiya; Shingo Fuchi; Masao Tabuchi; Yoshikazu Ta
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Article
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2011
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Elsevier Science
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English
⚖ 555 KB
The growth of In x Ga 1 À x N layers on c-plane GaN (2 mm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N 2 as the carrier gas. X-ray CTR scatterings on In x Ga 1 À x N layer were measured at growth temperatures and a