X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

✍ Scribed by Guangxu Ju; Koji Ninoi; Hajime Kamiya; Shingo Fuchi; Masao Tabuchi; Yoshikazu Takeda

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 555 KB
• Volume: 318
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.051

✦ Synopsis

The growth of In x Ga 1 À x N layers on c-plane GaN (2 mm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N 2 as the carrier gas. X-ray CTR scatterings on In x Ga 1 À x N layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or In x Ga 1 À x N in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of In x Ga 1 À x N. Single diffraction peaks of In 0.16 Ga 0.84 N and In 0.38 Ga 0.62 N films were observed at 830 and 780 1C, respectively.