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MOVPE growth and Mg doping of InxGa1−xN (x∼0.4) for solar cell

✍ Scribed by M. Horie; K. Sugita; A. Hashimoto; A. Yamamoto

Book ID: 108265511
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 405 KB
Volume: 93
Category: Article
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2008.11.031

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## Abstract In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise