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MOVPE growth of GaAs/GaAlAs structures on GaAs and Ge substrates for solar cell devices

✍ Scribed by C. Flores; B. Bollani; R. Campesato; F. Paletta; D. Passoni; G. Timò; A. Tosoni


Publisher
Elsevier Science
Year
1991
Weight
481 KB
Volume
23
Category
Article
ISSN
0165-1633

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Thick ZnTe grown on III-V substrates is proposed as a low-cost virtual substrate for electronic and optoelectronic device applications based on 6.1 Å compound semiconductors. This paper reports the growth of ZnTe samples on GaAs, InP, InAs and GaSb (0 0 1) substrates using molecular beam epitaxy (MB