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The investigation of mole fraction dependence of mobility for InxGa1−xN alloy

✍ Scribed by S. Aydogu; O. Ozbas


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
201 KB
Volume
8
Category
Article
ISSN
1369-8001

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Concentration and band offset dependence
✍ H. Hernández-Cocoletzi; D.A. Contreras-Solorio; S.J. Vlaev; I. Rodríguez-Vargas 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 236 KB

We calculate the transition energy from the first level of holes to the first level of electrons for cubic In x Ga 1Àx N/In y Ga 1Ày N quantum wells. We employ the empirical tight binding approach with an sp 3 s\* orbital basis, nearest neighbour interactions and the spin-orbit coupling, together wi