✦ LIBER ✦
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers
✍ Scribed by O. Kelekci; S.B. Lisesivdin; S. Ozcelik; E. Ozbay
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 974 KB
- Volume
- 406
- Category
- Article
- ISSN
- 0921-4526
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