The radiative recombination process of In x Ga 1±x N epitaxial layers was investigated by means of the temperature dependence of time-resolved photoluminescence spectra. Two emission components separated by about 40 meV were clearly observed. At 6 K, the higher-and lower-energy components had decay-
✦ LIBER ✦
Temperature Dependence of Optical Absorption Spectra in InxGa1—xN Epitaxial Layers
✍ Scribed by C. Sasaki; H. Naito; M. Iwata; H. Kudo; Y. Yamada; T. Taguchi; T. Jyouichi; H. Okagawa; K. Tadatomo; H. Tanaka
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 119 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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