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Determination of the composition of InxGa1−xN from strain measurements

✍ Scribed by F.M. Morales; D. González; J.G. Lozano; R. García; S. Hauguth-Frank; V. Lebedev; V. Cimalla; O. Ambacher


Book ID
103998934
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
709 KB
Volume
57
Category
Article
ISSN
1359-6454

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Compositional and morphological analysis
✍ Li, K.; Wee, A. T. S.; Lin, J.; Feng, Z. C.; Lau, E. W. P. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB 👁 1 views

The compositional and surface morphological properties of In x Ga 1-x N epilayers with different indium content grown on GaN sublayers have been studied by x-ray diffraction (XRD), RBS, XPS and atomic force microscopy (AFM). The In x Ga 1-x N epilayers were grown on GaN by metal-organic chemical vap