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Impact of strain on the band offsets of important III–V quantum wells: InxGa1−xN/GaN, GaAs/InxGa1−xP and InxGa1−xAs/AlGaAs

✍ Scribed by Biswas, Dipankar; Bera, Partha Pratim; Das, Tapas; Panda, Siddhartha

Book ID
121424225
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
914 KB
Volume
19
Category
Article
ISSN
1369-8001

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Concentration and band offset dependence
Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells
✍ H. Hernández-Cocoletzi; D.A. Contreras-Solorio; S.J. Vlaev; I. Rodríguez-Vargas 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 236 KB

We calculate the transition energy from the first level of holes to the first level of electrons for cubic In x Ga 1Àx N/In y Ga 1Ày N quantum wells. We employ the empirical tight binding approach with an sp 3 s\* orbital basis, nearest neighbour interactions and the spin-orbit coupling, together wi