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Indium segregation and reevaporation effects on the photoluminescence properties of highly strained InxGa1−xAs/GaAs quantum wells

✍ Scribed by B. Ilahi; L. Sfaxi; L. Bouzaı&#x0308;ene; F. Hassen; H. Maaref

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 94 KB
Volume: 17
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00771-3

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