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The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells

โœ Scribed by F. Smaoui; L. Mandhour; M.A. Maaref; L. Sfaxi; H. Maaref; R. Bennaceur

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
165 KB
Volume
26
Category
Article
ISSN
0928-4931

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๐Ÿ“œ SIMILAR VOLUMES

The effects of strain on the confinement
The effects of strain on the confinement profile of disordered InGaAs/GaAs single quantum wells
โœ Joseph Micallef; E.Herbert Li; Bernard L. Weiss ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 284 KB

The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disonder modify the confinement profile, the ground state transit