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The effects of strain on the confinement profile of disordered InGaAs/GaAs single quantum wells

✍ Scribed by Joseph Micallef; E.Herbert Li; Bernard L. Weiss

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 284 KB
Volume: 13
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1993.1024

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✦ Synopsis

The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disonder modify the confinement profile, the ground state transition energy and the strain-induced heavy hole-light hole band edge splitting. The shape of the confinement profile of disordered InGaAs/GaAs quantum well structures is shown to be more sensitive to the indium content than to the width of the as-grown quantum well.

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