a), P. Lefebvre 1 ) (a), X. B. Zhang (a), T. Taliercio (a), B. Gil (a), N. Grandjean (b), B. Damilano (b), and J. Massies (b) (a) Groupe d'Etude des Semiconducteurs,
Electric-Field Effects on the Band-Edge States of GaAs/AlAs Coupled Quantum Wells
โ Scribed by F.J. Ribeiro; R.B. Capaz; B. Koiller
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 76 KB
- Volume
- 232
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The binding energies of shallow hydrogenic donor impurities in GaAsยฑ(Ga,Al)As quantum boxes are calculated as a function of the size of the structure and as a function of the intensity of an applied electric field. The calculations are performed within the effective-mass approximation and using a va
Using a variational approach within the effective mass approximation we calculate the binding energy of the ground and some excited donor impurity states in quantum-well wires with rectangular and cylindrical transversal sections under the action of applied electric fields. We study the binding ener
The binding energy of a donor impurity in a spherical GaAsยฑ(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation