We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with
The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
β Scribed by Shudong Wu; Zhi Huang; Yuan Liu; Qiufeng Huang; Wang Guo; Yongge Cao
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 272 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
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