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The effects of In segregation on the emission properties of InxGa1 − xAsGaAs quantum wells

✍ Scribed by Haiping Yu; Christine Roberts; Ray Murray

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
299 KB
Volume
35
Category
Article
ISSN
0921-5107

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✦ Synopsis

In segregation modifies the quantum well (QW) potential and the emission energies in In x Ga~_ x As/GaAs QW. A second effect relates to the production of In-rich islands at the upper interface which trap free excitons. The low temperature exciton recombination kinetics are compared with the GaAs/AI~Gal_ x AS system. Interface localization is absent in the In~Ga]_ ~As/ GaAs QW, confirming that segregation smooths out interface roughness. The variation in photoluminescence decay times with temperature appears to be independent in In fraction but the absolute values increase owing to a reduction in the exciton coherence area.

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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with