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The (0001)-surface of 6HSiC: morphology, composition and structure

✍ Scribed by U. Starke; Ch. Bram; P.-R. Steiner; W. Hartner; L. Hammer; K. Heinz; K. Müller


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
978 KB
Volume
89
Category
Article
ISSN
0169-4332

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Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show