## Abstract A resonant voltage tuneable radiation (0.4 THzโ1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drainโtoโsource voltage, __U__~DS~, exceeds the threshold value, __U__~
โฆ LIBER โฆ
Terahertz spectroscopy of plasma waves in high electron mobility transistors
โ Scribed by Nouvel, P.; Marinchio, H.; Torres, J.; Palermo, C.; Gasquet, D.; Chusseau, L.; Varani, L.; Shiktorov, P.; Starikov, E.; Gruzinskis, V
- Book ID
- 119943818
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 625 KB
- Volume
- 106
- Category
- Article
- ISSN
- 0021-8979
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