Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
✍ Scribed by Łusakowski, J. ;Teppe, F. ;Dyakonova, N. ;Meziani, Y. M. ;Knap, W. ;Parenty, T. ;Bollaert, S. ;Cappy, A. ;Popov, V. ;Shur, M. S.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 94 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
A resonant voltage tuneable radiation (0.4 THz–1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain‐to‐source voltage, U~DS~, exceeds the threshold value, U~TH~; (ii) the resonant frequency can be tuned by U~DS~ in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U~TH~ linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U~DS~–U~TH~). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)