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Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

✍ Scribed by Otsuji, Taiichi; Hanabe, Mitsuhiro; Ogawara, Osamu


Book ID
118231157
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
498 KB
Volume
85
Category
Article
ISSN
0003-6951

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## Abstract A resonant voltage tuneable radiation (0.4 THz–1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain‐to‐source voltage, __U__~DS~, exceeds the threshold value, __U__~