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Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

✍ Scribed by Saxena, H.; Peale, R. E.; Buchwald, W. R.

Book ID
111682233
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
456 KB
Volume
105
Category
Article
ISSN
0021-8979

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πŸ“œ SIMILAR VOLUMES

Raman characterization of an operating I
Raman characterization of an operating InAlAsβ€”InGaAsβ€”InP high electronic mobility transistor
✍ N. Matrullo; M. Constant; G. Sagon; R. Fauquembergue; A. Leroy πŸ“‚ Article πŸ“… 1995 πŸ› John Wiley and Sons 🌐 English βš– 475 KB

## Abstract Raman scattering was used to probe electronic properties in In‐based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAsβ€”InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and tw