Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors
β Scribed by Solodky, S.; Khramtsov, A.; Baksht, T.; Leibovitch, M.; Hava, S.; Shapira, Yoram
- Book ID
- 118171877
- Publisher
- American Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 350 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0003-6951
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Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs=InGaAs=GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional proΓΏles fabricated by molecular beam epitaxy. Signals have been observed from every r
## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl