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Characterization of surface-undoped In0.52Al0.48 As/In0.53Ga0.47As/InP high electron mobility transistors

✍ Scribed by Pao, Y.-C.; Nishimoto, C.K.; Majidi-Ahy, R.; Archer, J.; Bechtel, N.G.; Harris, J.S., Jr.

No coin nor oath required. For personal study only.

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