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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

✍ Scribed by Knap, W.; Lusakowski, J.; Parenty, T.; Bollaert, S.; Cappy, A.; Popov, V. V.; Shur, M. S.

Book ID
121304328
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
56 KB
Volume
84
Category
Article
ISSN
0003-6951

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Terahertz generation by plasma waves in
Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
✍ Łusakowski, J. ;Teppe, F. ;Dyakonova, N. ;Meziani, Y. M. ;Knap, W. ;Parenty, T. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 94 KB

## Abstract A resonant voltage tuneable radiation (0.4 THz–1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain‐to‐source voltage, __U__~DS~, exceeds the threshold value, __U__~