✦ LIBER ✦

Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation

✍ Scribed by Ryzhii, V.; Khmyrova, I.; Satou, A.; Vaccaro, P. O.; Aida, T.; Shur, M.

Book ID: 120931745
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 334 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1510596

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Terahertz spectroscopy of plasma waves i

Terahertz spectroscopy of plasma waves in high electron mobility transistors

✍ Nouvel, P.; Marinchio, H.; Torres, J.; Palermo, C.; Gasquet, D.; Chusseau, L.; V 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 625 KB

Plasma and transit-time mechanisms of th

Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors

✍ Satou, A; Khmyrova, I; Ryzhii, V; Shur, M S 📂 Article 📅 2003 🏛 Institute of Physics 🌐 English ⚖ 425 KB

Terahertz generation by plasma waves in

Terahertz generation by plasma waves in nanometer gate high electron mobility transistors

✍ Łusakowski, J. ;Teppe, F. ;Dyakonova, N. ;Meziani, Y. M. ;Knap, W. ;Parenty, T. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB

## Abstract A resonant voltage tuneable radiation (0.4 THz–1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain‐to‐source voltage, __U__~DS~, exceeds the threshold value, __U__~

Terahertz emission by plasma waves in 60

Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

✍ Knap, W.; Lusakowski, J.; Parenty, T.; Bollaert, S.; Cappy, A.; Popov, V. V.; Sh 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 56 KB

Transit-time mechanism of plasma instabi

Transit-time mechanism of plasma instability in high electron mobility transistors

✍ Ryzhii, Victor ;Satou, Akira ;Shur, Michael S. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 374 KB

## Abstract We show that the transit‐time effects in the high‐electric‐field region near the drain edge of the channel of a field effect transistor can increase the increment of plasma wave growth in the device channel. These electron transit‐time effects might lead to the plasma wave instability i

Terahertz plasma wave resonance of two-d

Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

✍ Otsuji, Taiichi; Hanabe, Mitsuhiro; Ogawara, Osamu 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 498 KB