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“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate

✍ Scribed by Eiji Saito; Atsushi Konno; Takashi Ito; Kanji Yasui; Hideki Nakazawa; Tetsuo Endoh; Yuzuru Narita; Maki Suemitsu

No coin nor oath required. For personal study only.

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