𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Real time investigation of the growth of silicon carbide nanocrystals on Si(1 0 0) using synchrotron X-ray diffraction

✍ Scribed by S. Milita; M. De Santis; D. Jones; A. Parisini; V. Palermo


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
746 KB
Volume
254
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Thermal oxidation kinetics of an Si1βˆ’xCx
✍ Shuichi Ogawa; Tomofumi Kawamura; Yuji Takakuwa πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 681 KB

To clarify the oxide growth mechanism on strained Si surfaces, the thermal oxidation reaction kinetics of an Si 1-x C x (x 0.1) alloy layer with a c(4 Γ— 4) structure grown on Si(0 0 1) surfaces by carbonization with ethylene 636 β€’ C was investigated using RHEED combined with AES. Upon staring the ox

In situ investigation by GISAXS and GIXD
✍ M.-I. Richard; T.-U. SchΓΌlli; E. Wintersberger; G. Renaud; G. Bauer πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 272 KB

The growth mode, strain state and shape of Ge islands were analyzed in situ, during their growth on Si(0 0 1), by combining grazing incidence small angle X-ray scattering (GISAXS) and X-ray diffraction (GIXD) measurements. GISAXS measurements provide the detailed evolution of the shape of the grown