To clarify the oxide growth mechanism on strained Si surfaces, the thermal oxidation reaction kinetics of an Si 1-x C x (x 0.1) alloy layer with a c(4 Γ 4) structure grown on Si(0 0 1) surfaces by carbonization with ethylene 636 β’ C was investigated using RHEED combined with AES. Upon staring the ox
β¦ LIBER β¦
Real time investigation of the growth of silicon carbide nanocrystals on Si(1 0 0) using synchrotron X-ray diffraction
β Scribed by S. Milita; M. De Santis; D. Jones; A. Parisini; V. Palermo
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 746 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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