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Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces

✍ Scribed by P. Tejedor; F.E. Allegretti; P. Šmilauer; B.A. Joyce

Book ID
117218445
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
616 KB
Volume
407
Category
Article
ISSN
0039-6028

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Uniform GaAs quantum wires formed on vic
Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth
✍ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow