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Photoluminescence of InAs quantum wires on vicinal GaAs(110) surfaces

✍ Scribed by Kazuki Bando; Satoshi Torii; Byoung-Rho Shim; Takeshi Ota; Kenzo Maehashi; Keisuke Kobayashi; Hisao Nakashima

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
248 KB
Volume
47
Category
Article
ISSN
0167-9317

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πŸ“œ SIMILAR VOLUMES

Photoluminescence of modulation doped Ga
Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates
✍ Takehiro Nishida; Kenzo Maehashi; Takeshi Ota; Keisuke Kobayashi; Hisao Nakashim πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 239 KB

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Uniform GaAs quantum wires formed on vic
Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth
✍ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow