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Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE

✍ Scribed by Hisao Nakashima; Misaichi Takeuchi; Koichi Inoue; Toshikazu Takeuchi; Yoshiji Inoue; Peter Fischer; Jürgen Christen; Marius Grundmann; Dieter Bimberg


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
238 KB
Volume
227
Category
Article
ISSN
0921-4526

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Uniform GaAs quantum wires formed on vic
✍ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow