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Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3° toward (111)A by molecular beam epitaxy

✍ Scribed by Hisao Nakashima; Misaichi Takeuchi; Kazuki Sato; Kazuhiro Shiba; Hu Kum Huang; Kenzo Maehashi; Koichi Inoue; Jürgen Christen; Marius Grundmann; Dieter Bimberg


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
277 KB
Volume
35
Category
Article
ISSN
0921-5107

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Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [