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Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy

✍ Scribed by K. Kanamoto; K. Fujiwara; Y. Tokuda; N. Tsukada; M. Ishii; T. Nakayama


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
339 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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