GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow
โฆ LIBER โฆ
Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE
โ Scribed by Koichi Inoue; Kenta Kimura; Kenzo Maehashi; Shigehiko Hasegawa; Hisao Nakashima; Masaaki Iwane; Osamu Matsuda; Kazuo Murase
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 301 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
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