GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow
โฆ LIBER โฆ
Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces
โ Scribed by H. Nakashima; M. Takeuchi; K. Kimura; M. Iwane; Hu Kun Huang; K. Inoue; J. Christen; M. Grundmann; D. Bimberg
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 261 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0038-1101
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An AlGaAs(90 ร )/GaAs(45 ร ) quantum wire superlattice (QWR-SL) with excellent size uniformity is grown on a 4.8 ยตm pitch V-grooved substrate by flow rate modulation epitaxy at a specific growth temperature (โผ630 โข C). In the low temperature (12 K) photoluminescence spectrum of the AlGaAs(90 ร )/GaAs(4