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Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surface

✍ Scribed by Zhou Junming; Huang Yi; Li Yongkang; Jia Wei Yi

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
260 KB
Volume
81
Category
Article
ISSN
0022-0248

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A difference between initial growth stag
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The method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due t o pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary Ga-As melt on