A difference between initial growth stages of the AlGaAs/GaAs and GaAs/AlGaAs heterostructures produced by contact replacement of solutions
✍ Scribed by Dr. Yu. B. Bolkhovityanov; L. M. Logvinskii; N. S. Rudaya
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 623 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
The method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due t o pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary Ga-As melt on the ternary Al-Ga-As melt differ from that when the Ga-As solution pushes off the AI-Ga-As liquid. The difference is caused by the inequality of the diffusion coefficients of As and A1 in a multicomponent Al-Ga-As liquid ( D A ~ > > DA,). As a result, the growth of an AlGaAs film beginsimmediately in the case when the Al-Ga-As solution pushes off the Ga-As liquid but in the opposite case the dissolution of an underlying AlGaAs solid is unavoidable and depends little on degree of a saturation of the Ga-As washing solution. These peculiarities must be taken into account in discussions of abruptness and other properties of LPE-grown AlGaAs/GaAs and GaAs/ AlGaAs heterojunctions.