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Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates

โœ Scribed by Takehiro Nishida; Kenzo Maehashi; Takeshi Ota; Keisuke Kobayashi; Hisao Nakashima

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
239 KB
Volume
47
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

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๐Ÿ“œ SIMILAR VOLUMES

Uniform GaAs quantum wires formed on vic
Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth
โœ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow