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Initial growth of GaAs on vicinal Si(110) substrates

✍ Scribed by T. Yodo; M. Tamura; T. Saitoh

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
409 KB
Volume
150
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Effect of High Temperature-Pressure on G
Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates
✍ J. Bak-Misiuk; E. Dynowska; A. Misiuk; M. Calamiotou; A. Kozanecki; J. Domagala; πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 227 KB πŸ‘ 2 views

The effect of high hydrostatic pressure -high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated