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Growth modes in homoepitaxy on vicinal GaAs(110) surfaces

✍ Scribed by P. Tejedor; P. Šmilauer; B.A. Joyce


Book ID
117219294
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
287 KB
Volume
424
Category
Article
ISSN
0039-6028

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Uniform GaAs quantum wires formed on vic
✍ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow