๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110)

โœ Scribed by P. Tejedor; M.L. Crespillo; B.A. Joyce


Book ID
108215987
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
289 KB
Volume
26
Category
Article
ISSN
0928-4931

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Kinetically driven self-organization dur
โœ M.L. Crespillo; J.L. Sacedรณn; B.A. Joyce; P. Tejedor ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 293 KB

Self-organized growth of GaAs on (110) substrates vicinal to (111)A by hydrogen-assisted molecular beam epitaxy (H-MBE) has been studied for different kinetic regimes using atomic force microscopy (AFM). When GaAs growth is limited by kinetics of adatom incorporation to steps, the presence of chemis

Uniform GaAs quantum wires formed on vic
โœ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow