Self-organized growth of GaAs on (110) substrates vicinal to (111)A by hydrogen-assisted molecular beam epitaxy (H-MBE) has been studied for different kinetic regimes using atomic force microscopy (AFM). When GaAs growth is limited by kinetics of adatom incorporation to steps, the presence of chemis
โฆ LIBER โฆ
Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110)
โ Scribed by P. Tejedor; M.L. Crespillo; B.A. Joyce
- Book ID
- 108215987
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 289 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0928-4931
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GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow