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Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane

✍ Scribed by S.M. Mokler; N. Ohtani; J. Zhang; B.A. Joyce

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 344 KB
Volume: 222
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(92)90048-g

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